參數(shù)資料
型號(hào)： SUD30N04-10
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 40-V (D-S), 175C MOSFET
中文描述： N溝道40五（副），175C MOSFET的
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 66K
代理商： SUD30N04-10
SUD30N04-10
Vishay Siliconix
www.vishay.com
2
Document Number: 70782
S-31724—Rev. D, 18-Aug-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 40 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
30
A
V
GS
= 10 V, I
D
= 30 A
0.085
0.010
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.014
0.017
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.0185
0.022
V
GS
= 4.5 V, I
D
= 10 A
0.0115
0.014
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 125 C
0.0195
0.024
V
GS
= 4.5 V, I
D
= 10 A, T
J
= 175 C
0.025
0.031
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
20
57
S
Dynamic
b
Input Capacitance
C
iss
2700
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
600
pF
Reversen Transfer Capacitance
C
rss
160
Total Gate Charge
c
Q
g
50
100
Gate-Source Charge
c
Q
gs
V
= 15 V,
V
= 10 V, I
= 30 A
DS
GS
9
nC
Gate-Drain Charge
c
Q
gd
D
11
Gate Resistance
R
g
1
3.6
Turn-On Delay Time
c
t
d(on)
14
30
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 0.5
30 A, V
GEN
= 10 V, R
= 2.5
13
30
ns
Turn-Off Delay Time
c
t
d(off)
I
D
45
90
Fall Time
c
t
f
G
25
50
Source-Drain Ciode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
30
A
Pulsed Current
I
SM
120
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
0.90
1.50
V
Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/ s
50
100
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
相關(guān)PDF資料
PDF描述
SUD50N02-06P N-Channel MOSFET, 20 V(D-S) , 175°C
SUD50N03-10AP N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized
SUD50N03-10CP N-Channel 30-V (D-S), 175 Degrees Celcious, MOSFET PWM Optimized
SUD50P04-09L P-Channel, Tj = 175 °C power MOSFET; low leakage current;
SUD50P04-13L P-Channel 40-V (D-S), 175C MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUD30N04-10-E3 功能描述:MOSFET 40V 30A 97W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD35N05-26L 功能描述:MOSFET 55V 35A 50W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD35N05-26L 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK
SUD35N05-26L-E3 功能描述:MOSFET 55V 35A 50W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUD35N10 制造商:SHENZHENFREESCALE 制造商全稱:ShenZhen FreesCale Electronics. Co., Ltd 功能描述:N-Channel 100 V (D-S) 175 ?°C MOSFET
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*