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| 型號： | SUD23N06-31L |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | 其它接口 |
| 英文描述： | TERMINAL |
| 中文描述： | IGBT模塊 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 40K |
| 代理商： | SUD23N06-31L |
SUD23N06-31L
Vishay Siliconix
www.vishay.com
2
Document Number: 72145
S-03536—Rev. A, 24-Mar-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
2.0
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 48 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 48 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 48 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 15 A
0.025
0.031
Drain Source On State Resistance
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 C
0.055
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 C
0.069
V
GS
=
4.5
V, I
D
= 10 A
0.037
0.045
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 15 A
20
S
Dynamic
Input Capacitance
C
iss
670
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
140
pF
Reverse Transfer Capacitance
C
rss
60
Total Gate Charge
c
Q
g
11
17
Gate-Source Charge
c
Q
gs
V
= 30 V, V
= 10 V, I
= 23 A
DS
GS
3
nC
Gate-Drain Charge
c
Q
gd
D
3
Turn-On Delay Time
c
t
d(on)
8
15
Rise Time
c
t
r
= 30 V, R
= 1.3
V
DD
30 V, R
L
1.3
23 A, V
GEN
= 10 V, R
G
= 2.5
15
25
ns
Turn-Off Delay Time
c
t
d(off)
I
D
30
45
Fall Time
c
t
f
25
40
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
Pulsed Current
I
SM
50
A
Diode Forward Voltage
V
SD
I
F
= 15 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
I
F
= 15 A, di/dt = 100 A/ s
30
60
ns
Notes:
b.
c.
d.
For design aid only; not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
Independent of operating temperature.
2%.
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