參數(shù)資料
型號: SUD15N15-95
廠商: Vishay Intertechnology,Inc.
英文描述: SPICE Device Model SUD15N15-95
中文描述: 器件的SPICE模型SUD15N15 - 95
文件頁數(shù): 2/3頁
文件大?。?/td> 180K
代理商: SUD15N15-95
SPICE Device Model SUD15N15-95
Vishay Siliconix
www.vishay.com
2
Document Number: 71756
05-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.6
V
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
71
A
V
GS
= 10 V, I
D
= 15 A
0.069
0.077
V
GS
= 10 V, I
D
= 15 A, T
J
= 125
°
C
0.115
V
GS
= 10 V, I
D
= 15 A, T
J
= 175
°
C
0.139
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 6 V, I
D
= 10 A
0.080
0.081
Forward Voltage
b
Dynamic
a
V
SD
I
S
= 15 A, V
GS
= 0 V
0.89
0.90
V
Input Capacitance
C
iss
897
900
Output Capacitance
C
oss
126
115
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
73
70
pF
Total Gate Charge
c
Q
g
21
20
Gate-Source Charge
c
Q
gs
5.5
5.5
Gate-Drain Charge
c
Q
gd
V
DS
= 75 V, V
GS
= 10 V, I
D
= 15 A
7
7
nC
Turn-On Delay Time
c
t
d(on)
12
8
Rise Time
c
t
r
19
35
Turn-Off Delay Time
c
t
d(off)
36
17
Fall Time
c
t
f
V
DD
= 75 V, R
L
= 5
I
D
15 A, V
GEN
= 10 V, R
G
= 2.5
41
30
Source-Drain Reverse Recovery Time
t
rr
I
F
= 15 A, di/dt = 100 A/
μ
s
48
55
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300
μ
s, duty cycle
2%.
Independent of operating temperature.
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