參數(shù)資料
型號(hào)： SUB75P03-07
廠商： Vishay Intertechnology,Inc.
英文描述： P-Channel 30-V (D-S) 175C MOSFET
中文描述： P溝道30 V的（副）175葷MOSFET的
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 63K
代理商： SUB75P03-07
SUP/SUB75P03-07
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= –250 A
–30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= –250 A
–1
–3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= –30 V, V
GS
= 0 V
–1
V
DS
= –30 V, V
GS
= 0 V, T
J
= 125 C
–50
V
DS
= –30 V, V
GS
= 0 V, T
J
= 175 C
–250
On-State Drain Current
a
I
D(on)
V
DS
= –5 V, V
GS
= –10 V
–120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= –10 V, I
D
= –30 A
0.0055
0.007
DS(on)
r
V
GS
= –10 V, I
D
= –30 A, T
J
= 125 C
0.010
V
GS
= –10 V, I
D
= –30 A, T
J
= 175 C
0.013
V
GS
= –4.5 V, I
D
= –20 A
0.008
0.010
Forward Transconductance
a
g
fs
V
DS
= –15 V, I
D
= –75 A
20
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= –25 V, f = 1 MHz
0 V V
25 V f
9000
Output Capacitance
C
oss
1565
pF
Reversen Transfer Capacitance
C
rss
715
Total Gate Charge
c
Q
g
V
DS
= –15 V V
V
GS
= –10 V, I
D
= –75 A
10 V I
160
240
Gate-Source Charge
c
Q
gs
32
nC
Gate-Drain Charge
c
Q
gd
30
Turn-On Delay Time
c
t
d(on)
25
40
Rise Time
c
t
r
V
= –15 V, R
= 0.2
DD
–75 A, V
GEN
= –10 V, R
G
= 2.5
225
360
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
150
240
Fall Time
c
t
f
210
340
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
–75
A
Pulsed Current
I
SM
–240
Forward Voltage
a
V
SD
I
F
= –75 A, V
GS
= 0 V
–1.2
–1.5
V
Reverse Recovery Time
t
rr
I
F
= –75 A, di/dt = 100 A/ s
75 A di/d
55
100
ns
Peak Reverse Recovery Current
I
RM(REC)
2.5
5
A
Reverse Recovery Charge
Q
rr
0.07
0.25
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
相關(guān)PDF資料
PDF描述
SUP75P03-07 P-Channel 30-V (D-S) 175C MOSFET
SUB75P03-08 P-Channel 30-V (D-S), 175C MOSFET
SUP75P03-08 P-Channel 30-V (D-S), 175C MOSFET
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SUB75P05-08-E3 功能描述:MOSFET 55V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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