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參數(shù)資料
| 型號： | SUB75N08-10 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 75-V (D-S), 175C MOSFET |
| 中文描述： | N通道75 - V（下局副局長），175C MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | SUB75N08-10 |
SUP/SUB75N08-10
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
Specifications (T
J
= 25 C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
75
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2.0
3.5
4.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 75 V, V
GS
= 0 V
1
A
V
DS
= 75 V
,
V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 75 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
120
A
D i S
O S
R
i
a
V
GS
= 10 V, I
D
= 30 A
0.0087
0.010
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.017
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.021
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
4800
Output Capacitance
C
oss
910
pF
Reverse Transfer Capacitance
C
rss
270
Total Gate Charge
c
Q
g
V
DS
= 30 V V
,
V
GS
= 10 V, I
D
= 75 A
10 V I
85
120
Gate-Source Charge
c
Q
gs
31
nC
Gate-Drain Charge
c
Q
gd
24
Turn-On Delay Time
c
t
d(on)
V
= 30 V, R
= 0.47
75 A V
75 A, V
GEN
= 10 V, R
G
= 2.5
30 V R
0 47
20
40
Rise Time
c
t
r
I
D
10 V R
2 5
95
200
ns
Turn-Off Delay Time
c
t
d(off)
65
120
Fall Time
c
t
f
20
60
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
75
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 75 A , V
GS
= 0 V
1.0
1.3
V
Reverse Recovery Time
t
rr
I
F
= 75 A, di/dt = 100 A/ s
75 A di/d
80
120
ns
Peak Reverse Recovery Current
I
RM(REC)
7
9
A
Reverse Recovery Charge
Q
rr
0.28
0.54
C
Notes
a.
b.
c.
Pulse test: pulse width
300
sec, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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