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參數(shù)資料
| 型號(hào)： | SUB75N06-07L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) 175C MOSFET |
| 中文描述： | N通道60 - V（下局副局長(zhǎng)）175C MOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 45K |
| 代理商： | SUB75N06-07L |
SUP/SUB75N06-07L
Vishay Siliconix
www.vishay.com
2-2
Document Number: 70776
S-05111
—
Rev. F, 10-Dec-00
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V
,
V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
0.0061
0.0075
V
GS
= 4.5 V, I
D
= 20A
0.0071
0.0085
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.012
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.015
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
6300
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
920
pF
Reverse Transfer Capacitance
C
rss
350
Total Gate Charge
c
Q
g
75
120
Gate-Source Charge
c
Q
gs
V
= 30 V
,
V
= 10 V, I
= 75 A
DS
GS
18
nC
Gate-Drain Charge
c
Q
gd
D
27
Turn-On Delay Time
c
t
d(on)
14
40
Rise Time
c
t
r
V
= 30 V, R
= 0.47
75 A, V
GEN
= 10 V, R
G
= 2.5
15
40
Turn-Off Delay Time
c
t
d(off)
I
D
150
300
ns
Fall Time
c
t
f
50
100
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
75
Pulsed Current
I
SM
240
A
Forward Voltage
a
V
SD
I
F
= 75 A , V
GS
= 0 V
1.0
1.3
V
Reverse Recovery Time
t
rr
67
120
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 75 A, di/dt = 100 A/ s
F
6
8
A
Reverse Recovery Charge
Q
rr
0.2
0.48
C
Notes
a.
b.
c.
Pulse test: pulse width
300
sec, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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| SUB75N06-07L-E3 | 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB75N06-08 | 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB75N06-08 | 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK |
| SUB75N06-08-E3 | 功能描述:MOSFET 60V 75A 250W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUB75N06-12L | 功能描述:MOSFET 60V 75A 142W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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