參數(shù)資料
型號(hào)： SUB75N05-06
廠商： Vishay Intertechnology,Inc.
英文描述： N-Channel 50-V (D-S), 175C MOSFET
中文描述： N溝道50五（副），175葷MOSFET的
文件頁數(shù)： 2/5頁
文件大小： 78K
代理商： SUB75N05-06
SUP/SUB75N05-07
Vishay Siliconix
New Product
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70871
S-60952—Rev. A, 19-Apr-99
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
55
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 44 V, V
GS
= 0 V
1
A
V
DS
= 44 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 44 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.0056
0.007
r
DS(on)
V
GS
= 4.5 V, I
D
=
20 A
0.0072
0.009
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.011
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.015
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
40
S
Dynamic
b
Input Capacitance
C
iss
6830
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
720
pF
Reverse Transfer Capacitance
C
rss
350
Total Gate Charge
c
Q
g
V
DS
= 30 V V
V
GS
= 10 V, I
D
= 75 A
10 V I
135
170
Gate-Source Charge
c
Q
gs
25
nC
Gate-Drain Charge
c
Q
gd
34
Turn-On Delay Time
c
t
d(on)
V
= 30 ,
= 0 47
75 A V
75 A, V
GEN
= 10 V, R
G
= 2.5
13
20
Rise Time
c
t
r
I
D
10 V R
2 5
11
20
ns
Turn-Off Delay Time
c
t
d(off)
90
160
Fall Time
c
t
f
25
40
Source-drain Diode Ratings and Characteristics (T
c
= 25 C)
b
Continuous Current
I
S
75
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 75 A, V
GS
= 0 V
1.0
1.3
V
Reverse Recovery Time
t
rr
I
F
= 75 A, di/dt = 100 A/ s
75 A di/dt
45
80
ns
Peak Reverse Recovery Current
I
RM(REC)
2
5
A
Reverse Recovery Charge
Q
rr
0.09
0.4
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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