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參數(shù)資料
| 型號： | STW9NK60Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道高達700V - 1ohm - 7.5A的TO-220/FP/D2PAK/I2PAK/TO-247齊保護的SuperMESH⑩功率MOSFET |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 664K |
| 代理商： | STW9NK60Z |
STP9NK70Z / STP9NK70ZFP / STB9NK70Z / STB9NK70Z-1 / STW9NK70Z
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
(
l
) Pulse width limited by safe operating area
(1) I
SD
≤
7.5A, di/dt
≤
200
μ
A, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and cost-
effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Parameter
Value
Unit
TO-220 /
D
2
PAK / I
2
PAK
TO-220FP
TO-247
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
l
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
700
V
700
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
7.5
7.5 (*)
7.5
A
4.7
4.7 (*)
4.7
A
Drain Current (pulsed)
30
30 (*)
30
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
115
35
156
W
0.92
0.28
1.25
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I
2
PAK
D
2
PAK
TO-220FP
TO-247
Rthj-case
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
Thermal Resistance Junction-ambient Max
1.09
3.6
0.8
°C/W
Rthj-pcb
30
°C/W
Rthj-amb
T
l
62.5
30
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
7.5
Unit
A
230
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
Typ.
Max.
Unit
V
相關PDF資料 |
PDF描述 |
|---|---|
| STB9NK70Z-1 | N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STW9NK70Z | N-CHANNEL 700V - 1ohm - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| STX790A | MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR |
| STX83003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| STY15NA100 | N-Channel 1000V-0.65Ω-15A- Max247 MOSFET(N溝道MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STW9NK70Z | 功能描述:MOSFET N Ch 700V 1 OHM 7.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW9NK90Z | 功能描述:MOSFET N-Ch 900 Volt 8 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW9NK95Z | 制造商:STMicroelectronics 功能描述:MSOFET N-CH 950V 7A TO-247 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 950V 7A TO247 |
| STW9Q14BE | 制造商:Seoul Semiconductor 功能描述: |
| STW9Q14B-R0S5-GA | 制造商:Seoul Semiconductor 功能描述:STW9Q14B - Tape and Reel |
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