參數(shù)資料
型號(hào)： STW8NB80
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET
中文描述： ? -頻道800V的- 1.2ohm - 7.5A的-對(duì)MOSFET的247 PowerMESH
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 50K
代理商： STW8NB80
STW8NB80
N - CHANNEL 800V - 1.2
- 7.5A - TO-247
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.2
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
I
HIGH CURRENT, HIGH SPEED SWITCHING
INTERNAL SCHEMATIC DIAGRAM
January 1999
1
2
3
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
800
800
±
30
7.5
4.7
30
170
1.36
4
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V/ns
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤ 7.5
A, di/dt
≤ 200 Α/μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
dv/dt (
1
)
T
stg
T
j
TYPE
V
DSS
800 V
R
DS(on)
< 1.6
I
D
STW8NB80
7.5 A
1/5
相關(guān)PDF資料
PDF描述
STW8NC70Z N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW8NB90 功能描述:MOSFET N-CH 900V 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW8NC70Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET
STW8NC80Z 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW8NC90Z 功能描述:MOSFET TO-247 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW8NK80Z 功能描述:MOSFET N-Ch 800 Volt 6.2A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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