- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382569 > STW80NF55-06 (意法半導(dǎo)體) N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET⑩ II POWER MOSFET PDF資料下載
參數(shù)資料
| 型號： | STW80NF55-06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 55V - 0.005ohm - 80A TO-247 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道55V的- 0.005ohm - 80A的- 247 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 114K |
| 代理商： | STW80NF55-06 |
1/6
PRELIMINARY DATA
October 2001
STW80NF55-06
N-CHANNEL 55V - 0.005
- 80A TO-247
STripFET II POWER MOSFET
(1) Starting T
j
= 25
°C, I
D
= 40A, V
DD
= 40V
(*) Current Limited by wire bonding
I
TYPICAL R
DS
(on) = 0.005
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
I
DC-AC & DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(*)
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW80NF55-06
55 V
< 0.0065
80 A
Parameter
Value
Unit
55
V
55
V
±20
V
80
A
80
A
320
A
300
W
2
W/°C
1
J
– 55 to 175
°C
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STW80NF55-08 | N-CHANNEL 55V - 0.0065ohm - 80A TO-247 STripFET⑩ POWER MOSFET |
| STW8N80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STW8NB100 | N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET |
| STW8NB80 | N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET |
| STW8NC70Z | N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW80NF55-08 | 功能描述:MOSFET N-Ch 55 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW81100 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MULTI-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs |
| STW81100_1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MULTI-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOs |
| STW81100AT | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:MULTI-BAND RF FREQUENCY SYNTHESIZER WITH INTEGRATED VCOS |
| STW81100AT-1 | 功能描述:鎖相環(huán) - PLL MULTI BAND RF FREQ SYNTHESIZER RoHS:否 制造商:Silicon Labs 類型:PLL Clock Multiplier 電路數(shù)量:1 最大輸入頻率:710 MHz 最小輸入頻率:0.002 MHz 輸出頻率范圍:0.002 MHz to 808 MHz 電源電壓-最大:3.63 V 電源電壓-最小:1.71 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:QFN-36 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。