參數(shù)資料
型號(hào): STW45NM60
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 600V - 0.09ohm - 45A TO-247 MDmesh⑩Power MOSFET
中文描述: N溝道600V的- 0.09ohm - 45A條至247的MDmesh⑩功率MOSFET
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 256K
代理商: STW45NM60
1/8
August 2002
STW45NM60
N-CHANNEL 600V - 0.09
- 45A TO-247
MDmeshPower MOSFET
n
TYPICAL R
DS
(on) = 0.09
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW45NM60
600V
< 0.11
45 A
Parameter
Value
Unit
600
V
600
V
±30
V
45
A
28
A
180
A
417
W
3.33
15
W/°C
V/ns
–65 to 150
°C
150
°C
(1) I
SD
45A, di/dt
400A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
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參數(shù)描述
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