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參數(shù)資料
| 型號(hào)： | STW50NB20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET |
| 中文描述： | ? -通道200伏- 0.047ohm - 50A條-對(duì)MOSFET的247 PowerMESH |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | STW50NB20 |
STW50N10
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.027
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
POWER MOTOR CONTROL
I
DC-DC & DC-AC CONVERTERS
I
SYNCRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
January 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
100
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
GS
±
20
V
I
D
50
A
I
D
35
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
200
A
P
tot
180
W
Derating Factor
1.2
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
175
I
SD
≤
60 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.035
I
D
STW50N10
100 V
50 A
TO-247
1
2
3
1/8
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