參數(shù)資料
型號(hào)： STW25NM50N
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET
中文描述： N溝道500V0.11Ω的- 22甲TO-220/FP/D/IPAK/TO-247 MOSFET的第二代MDmesh
文件頁(yè)數(shù)： 3/16頁(yè)
文件大小： 678K
代理商： STW25NM50N
3/16
STB25NM50N/-1 - STW25NM50N - STP25NM50N - STF25NM50N
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
(2) Characteristic value at turn off on inductive load
Table 7: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 8: Source Drain Diode
Symbol
I
SD
I
SDM
( )
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(*) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
Value
Typ.
Unit
Min.
500
Max.
V
(BR)DSS
Drain-source
Breakdown Voltage
Drain Source Voltage
Slope
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 1mA, V
GS
= 0
V
dv/dt(2)
Vdd=400V, Id=25A,
Vgs=10V
V
DS
= Max Rating
V
DS
= Max Rating,
T
C
= 125 °C
V
GS
= ± 20V
44
V/ns
I
DSS
1
10
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
100
nA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10V, I
D
= 11 A
2
3
4
V
Static Drain-source On
Resistance
0.110
0.140
Parameter
Test Conditions
V
DS
=15 V
,
I
D
=11 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
Max.
Unit
Forward Transconductance
19
S
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
2565
511
77
pF
pF
pF
C
oss eq.
(*)
V
GS
= 0V, V
DS
= 0V to 400V
315
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
g
V
DD
=250 V, I
D
= 11A
R
G
= 4.7
V
GS
= 10 V
(see Figure 19)
23
23
75
22
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400V, I
D
=22 A,
V
GS
= 10V,
(see Figure 23)
84
11
35
nC
nC
nC
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Parameter
Test Conditions
Min.
Typ.
Max.
22
88
Unit
A
A
Source-drain Current
I
SD
= 22 A, V
GS
= 0
I
SD
= 22A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 25°C
(see Figure 21)
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
460
6.9
30
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 22 A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150°C
(see Figure 21)
532
8.25
31
ns
μC
A
相關(guān)PDF資料
PDF描述
STB25NM50N-1 N-CHANNEL 500V 0.11ohm - 22 A TO-220/FP/D/IPAK/TO-247 SECOND GENERATION MDmesh MOSFET
STP30N06FI N-Channel Enhancement Mode Power MOS Transistor(N溝道增強(qiáng)模式功率MOSFET)
STP30NE06L N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
STP30NE06LFP N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET
STP32N05L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW25NM60N 功能描述:MOSFET N-Ch 600 V 0.14 Ohm 20 A 2nd Gen MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW25NM60ND 功能描述:MOSFET N-channel 600V, 21A FDMesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW26NM50 功能描述:MOSFET N-Ch 500 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW26NM60 功能描述:MOSFET N-Ch 600 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW26NM60N 功能描述:MOSFET N-channel 600 V Mdmesh II Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*