參數(shù)資料
型號(hào)： STW20NK50Z
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 500V -0.23 OHM - 17A TO-220/D2PAK/I2SPAK/TO-247
中文描述： N溝道500V -0.23歐姆- 17A條TO-220/D2PAK/I2SPAK/TO-247
文件頁(yè)數(shù)： 3/13頁(yè)
文件大?。?/td> 383K
代理商： STW20NK50Z
3/13
STP20NK50Z - STB20NK50Z - STW20NK50Z - STB20NK50Z-S
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON/OFF
Symbol
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
500
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20 V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 8.5 A
0.23
0.27
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 8.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
13
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
2600
328
72
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 640V
187
pF
Parameter
Test Conditions
V
DD
= 250 V, I
D
= 8.5 A
R
G
= 4.7
,
V
GS
= 10 V
(Resistive Load see, Figure 3)
Min.
Typ.
28
20
70
15
Max.
Unit
ns
ns
ns
ns
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 400 V, I
D
= 17 A,
V
GS
= 10 V
85
15.5
42
119
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
17
68
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 17 A, V
GS
= 0
I
SD
= 17 A, di/dt = 100 A/μs
V
R
= 100 V, T
j
= 25
°
C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
355
3.90
22
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 17 A, di/dt = 100 A/μs
V
R
= 100 V, T
j
= 150
°
C
(see test circuit, Figure 5)
440
5.72
26
ns
μC
A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW20NK50Z 制造商:STMicroelectronics 功能描述:MOSFET N TO-247
STW20NK70Z 功能描述:MOSFET N-Ch 700 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW20NM50 功能描述:MOSFET N-Ch 500 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW20NM50 制造商:STMicroelectronics 功能描述:MOSFET Transistor Transistor Polarity:N
STW20NM50FD 功能描述:MOSFET N-Ch 500 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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