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參數(shù)資料
| 型號： | STW14NK60Z |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大?。?/td> | 553K |
| 代理商： | STW14NK60Z |
3/17
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 μA
R
DS(on)
Static Drain-source On
Resistance
Table 8: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
C
oss eq.
(3)
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Test Conditions
I
D
= 1mA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 30V
±10
μA
3
3.75
4.5
V
Ω
V
GS
= 10V, I
D
= 6 A
0.45
0.5
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 6 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
11
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2220
240
57
pF
pF
pF
Equivalent Output Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
V
DD
= 300 V, I
D
= 6 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
(Resistive Load see, Figure 21)
122
pF
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
26
18
62
13
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 12 A,
V
GS
= 10V
(see, Figure 24)
75
13.2
38.6
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
12
48
Unit
A
A
Source-drain Current
I
SD
= 12 A, V
GS
= 0
I
SD
= 12 A, di/dt = 100 A/μs
V
DD
= 50 V, T
j
= 25°C
(see test circuit, Figure 22)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
490
4.7
19.3
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 12 A, di/dt = 100 A/μs
V
DD
= 50 V, T
j
= 150°C
(see test circuit, Figure 22)
664
6.8
20.5
ns
μC
A
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