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參數(shù)資料
| 型號： | STW14NK60Z |
| 廠商： | 意法半導體 |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/17頁 |
| 文件大?。?/td> | 553K |
| 代理商： | STW14NK60Z |
STP14NK60Z - STP14NK60ZFP - STB14NK60Z - STB14NK60Z-1 - STW14NK60Z
2/17
Table 3: Absolute Maximum ratings
Symbol
( )
Pulse width limited by safe operating area
(1) I
SD
≤
13.5A, di/dt
≤
200 A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
TO-220/D2PAK/I2PAK
TO-247
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
Ω
)
600
V
600
V
Gate-source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
13.5
13.5 (*)
A
8.5
8.5 (*)
A
Drain Current (pulsed)
54
54 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD (HBM-C= 100pF, R= 1.5k
Ω
)
Peak Diode Recovery voltage slope
160
40
W
1.28
0.32
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Winthstand Voltage (DC)
--
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220/D2PAK/I2PAK
TO-247
TO-220FP
Unit
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.78
62.5
3.1
50
°C/W
°C/W
°C
Maximum Lead Temperature For Soldering Purpose
300
Parameter
Max Value
12
Unit
A
300
mJ
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV
GSO
Gate source Breakdown
Voltage
I
gs
= ± 1 mA
(Open Drain)
30
V
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