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參數資料
| 型號： | STV80NE03L-06 |
| 廠商： | 意法半導體 |
| 英文描述： | PC 3C 3#20 SKT RECP |
| 中文描述： | ? -通道30V的- 0.005ohm - 80A條- PowerSO - 10 STripFET MOSFET的 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | STV80NE03L-06 |
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V
R
G
=4.7
(see test circuit, figure 3)
V
DD
= 24 V
I
D
= 40 A
V
GS
= 5 V
40
260
55
350
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I
D
= 80 A
V
GS
= 5 V
95
30
44
130
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 24 V
R
G
=4.7
(see test circuit, figure 5)
I
D
= 80 A
V
GS
= 5 V
70
165
250
95
220
340
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
80
320
A
A
V
SD
(
)
t
rr
I
SD
= 80 A
I
SD
= 80 A
V
DD
= 15 V
(see test circuit, figure 5)
V
GS
= 0
di/dt = 100 A/
μ
s
T
j
= 150
o
C
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
75
0.14
4
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
SafeOperating Area for
Thermal Impedance
STV80NE03L-06
3/8
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