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參數(shù)資料
| 型號(hào)： | STV80NE03L-06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | PC 3C 3#20 SKT RECP |
| 中文描述： | ? -通道30V的- 0.005ohm - 80A條- PowerSO - 10 STripFET MOSFET的 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 91K |
| 代理商： | STV80NE03L-06 |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 15 V)
80
A
E
AS
600
mJ
ELECTRICAL CHARACTERISTICS
(T
J =
- 40 to 150
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
I
D
= 250
μ
A
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
V
GS
= 0
V
GS
= 0
T
c
=25
o
C
T
c
=25
o
C
27
30
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
1
50
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
μ
A
I
D
= 250
μ
A
I
D
= 40 A
I
D
= 40 A
I
D
= 40 A
I
D
= 40 A
V
DS
= V
GS
V
GS
= 10V
V
GS
= 5V
V
GS
= 10V
V
GS
= 5V
T
J
=25
o
C
0.6
1.7
3.0
2.5
V
R
DS(on)
Static Drain-source On
Resistance
T
J
=25
o
C
T
J
=25
o
C
0.005
0.012
0.018
0.006
0.009
A
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
40
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=40 A
20
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
6500
1500
500
8700
2000
700
pF
pF
pF
STV80NE03L-06
2/8
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