參數(shù)資料
型號: STV7801S
廠商: 意法半導(dǎo)體
英文描述: PLASMA DATA POWER SWITCH
中文描述: 等離子體數(shù)據(jù)電源開關(guān)
文件頁數(shù): 6/18頁
文件大?。?/td> 196K
代理商: STV7801S
STV7801S
6/18
6 - POWER ON SEQUENCE
If Vpp is switched ON before Vdd, the circuit remains in Tri-State mode until Vdd reaches Vdd threshold.
If Vddis switched ON before Vpp, the circuit remains in Tri-State mode until Vpp reaches Vpp threshold.
7 - ABSOLUTE MAXIMUM RATINGS
Note 1
Peak current as defined in
Figure 1 on page 9
Note 2
These parameters are measured during ST’s internal qualification which includes temperature characterization
on standard and corner batches of the process. These parameters are not tested on the parts.
Remark:
ESD susceptibility
Human body Model: 100pF, 1.5k
Vpp
pin (14-15: Multiwatt 15) V
ESD
= 200V
DM-LH
pin (9: Multiwatt 15) V
ESD
=400V
By connecting a 1nF decoupling capacitor, the circuit withstands V
ESD
=2.2kV on all pins.
8 - THERMAL DATA
Note 3
Multilayer PCB.
Note 4
Package floating in the air.
Symbol
Parameter
Value
Unit
Vdd
Logic Supply Range
-0.3,+14
V
Vpp
Driver Supply Range
-0.3 , + 100
V
VIn
Logic Input Voltage Range
-0.3, Vdd+0.3
°C
Ih-Out
Main Switch High Side Current
-5
A
Il-Out
Main Switch Low Side Current
5
A
Ipr-Hi
Power Recovery Current (
note1
)
-7
A
Ipr-Lo
Power Recovery current (
note1
)
7
A
V
CBoot-Vout
Difference between Boot voltage and output voltage
14
V
Tjmax
Maximum Junction Temperature (
note2
)
Internally
protected
°C
Top
Operating Temperature Range
-20, +70
°C
Tstg
Storage Temperature Range
-50, +150
°C
Symbol
Parameter
Value
Unit
PowerSO20
MW15
R
th(j-a)
Junction - Ambient Thermal Resistance
40(
note3
)
35 (
note4
)
°C/W
R
th(j-c)
Junction - Case Thermal Resistance
+0.6, +2.5
-0.6, +2.4
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