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參數(shù)資料
| 型號： | STV7801S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | PLASMA DATA POWER SWITCH |
| 中文描述： | 等離子體數(shù)據(jù)電源開關(guān) |
| 文件頁數(shù)： | 11/18頁 |
| 文件大?。?/td> | 196K |
| 代理商： | STV7801S |
STV7801S
11/18
13 - APPLICATION DIAGRAM
The diodes for the recirculation current directly im-
pact the device performances. High Voltage di-
odes with recovery time inferior to 50ns are recom-
mended. Shorter recovery times will improve the
power efficiency of the application.
The rise and fall time of the output signal is adjust-
ed by the value of the inductance for a given ca-
pacitive load.
trise (tfall) is calculated by the following formula :
A 1nF bootstrap capacitor is recommended.
The bootstrap capacitor allows the output signal to
reach the
Vpp
value. For a given output level, the
power efficiency will be increased.
A 47
μ
F capacitor is recommended. The ripple on
the tank capacitor is reduced by increasing the
tank capacitor value.
Decoupling capacitors on the power supplies will
minimise the overshoots.
HL-Tr
Vpp
Out
PR
+90V
100
μ
F/160V
CBoot
1nF
DM-HL
S
Vsslog
Vdd
Vssp
100pF
10K
1
μ
H
DM-LH
1
15
14
6
7
8
9
10
11
12
13
Vpp
H-Clmp
100pF
10K
2
L-Clmp
100pF
10K
3
LH-Tr
100pF
10K
4
5
47
μ
F/160V
1
μ
F/160V
(eg pins 1, 2, 42, 66,
107,108 of STV7610A)
to Vpp pins
of data driver ICs
trise
π
x LxCload
=
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