參數(shù)資料
型號： STU8NA80
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode Fast Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率MOS晶體管)
中文描述： N溝道增強(qiáng)模式快速功率MOS晶體管（不適用溝道增強(qiáng)模式功率馬鞍山晶體管）
文件頁數(shù)： 1/5頁
文件大?。?/td> 71K
代理商： STU8NA80
STU8NA80
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.85
I
EFFICIENT AND RELAIBLE MOUNTING
THROUGH CLIP
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE
SPREAD.
DESCRIPTION
The Max220
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 1.0
I
D
STU8NA80
800 V
8.3 A
March 1996
123
Max220
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
800
V
800
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
±
30
8.3
V
I
D
I
D
A
5.3
A
I
DM
(
)
33.2
A
P
tot
160
W
Derating Factor
1.28
W/
o
C
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
1/5
相關(guān)PDF資料
PDF描述
STU8NB90 N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
STU9NA60 N-Channel Enhancement Mode Fast Power MOS Transistor(Ｎ溝道增強(qiáng)模式功率MOS晶體管)
STU9NB80 N-CHANNEL 800V - 0.85ohm - 9.3A - TO-247 PowerMESH MOSFET
STU9NC80Z N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
STU9NC80 N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STU8NB90 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
STU8NC90Z 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
STU8NC90ZI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STU8NM50N 功能描述:MOSFET N-Ch 500V 0.73 Ohm 5A MDmesh II Mos RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STU8NM60ND 功能描述:MOSFET N-CH 6V 7A FDMESH FDMesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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