- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380784 > STU9NC80Z (意法半導(dǎo)體) N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET PDF資料下載
參數(shù)資料
| 型號： | STU9NC80Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道800V的- 0.82ohm - 8.6A Max220/I-Max220齊保護(hù)的PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 407K |
| 代理商： | STU9NC80Z |
1/10
Sep 2000
STU9NC80Z
STU9NC80ZI
N-CHANNEL 800V - 0.82
- 8.6A Max220/I-Max220
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 0.82
I
EXTREMELY HIGH dv/dt CAPABILITY
I
GATE-TO-SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STU9NC80Z
STU9NC80ZI
800 V
800 V
<0.9
<0.9
8.6 A
8.6 A
Parameter
Value
Unit
STU9NC80Z
STU9NC80ZI
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
800
V
800
V
Gate- source Voltage
±25
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
8.6
8.6(*)
A
5.4
5.4(*)
A
Drain Current (pulsed)
34.4
34.4(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
160
55
W
1.28
0.44
W/°C
I
GS
Gate-source Current
±50
mA
V
ESD(G-S)
dv/dt(
G
)
V
ISO
T
stg
T
j
Gate source ESD(HBM-C=100pF, R=15K
)
Peak Diode Recovery voltage slope
4
KV
3
V/ns
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
8.6A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(*)Limited only by maximum temperature allowed
Max220
I-Max220
123
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STU9NC80 | N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| STU9NC80ZI | N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| STU9NC90ZI | N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| STU8NC90ZI | OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
| STU8NC90Z | N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STU9NC80ZI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| STU9NC90ZI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.1ohm - 7.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| STUB010 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
| STUB011 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
| STUB012 | 制造商:EIC 制造商全稱:EIC discrete Semiconductors 功能描述:SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。