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參數(shù)資料
| 型號： | STTH4R02U |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Ultrafast recovery diode |
| 中文描述： | 超快恢復(fù)二極管 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大小： | 130K |
| 代理商： | STTH4R02U |
STTH4R02
Characteristics
3/13
Static electrical characteristics
To evaluate the conduction losses use the following equation:
P = 0.67 x I
F(AV)
+ 0.04 I
F2(RMS)
Dynamic characteristics
peak current versus duty cycle
Table 3.
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
I
R(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
3
μA
T
j
= 125° C
2
20
V
F(2)
Forward voltage drop
T
j
= 25° C
I
F
= 12 A
1.15
1.25
V
T
j
= 25° C
I
F
= 4 A
0.95
1.05
T
j
= 150° C
0.76
0.83
1.
Pulse test: t
p
= 5 ms,
δ
< 2 %
Pulse test: t
p
= 380 μs,
δ
< 2 %
2.
Table 4.
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
t
rr
Reverse recovery time
I
F
= 1 A, dI
F
/dt = -50 A/μs,
V
R
= 30 V, T
j
= 25° C
24
30
ns
I
F
= 1 A, dI
F
/dt = -100 A/μs,
V
R
= 30 V, T
j
= 25° C
16
20
I
RM
Reverse recovery current
I
F
= 4 A, dI
F
/dt = -200 A/μs,
V
R
= 160 V, T
j
= 125° C
4.4
5.5
A
t
fr
Forward recovery time
I
F
= 4 A, dI
F
/dt = 50 A/μs
V
FR
= 1.1 x V
Fmax
, T
j
= 25° C
80
ns
V
FP
Forward recovery voltage
I
F
= 4 A, dI
F
/dt = 50 A/μs,
T
j
= 25° C
1.6
V
Figure 1.
Figure 2.
Forward voltage drop versus
forward current (typical values)
0
5
10
15
20
25
30
35
40
45
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
I
M
(A)
T
d
δ
=tp/T
tp
I
M
P = 2 W
P = 1 W
P = 5 W
δ
I
FM
(A)
0
25
50
75
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T
j
=25°C
T
j
=150°C
V
FM
(V)
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