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參數(shù)資料
| 型號： | STT5NF30L |
| 英文描述： | N-CHANNEL 30V 0.039 OHM 4A SOT23-6L STRIPFET II POWER MOSFET |
| 中文描述： | N溝道30V的0.039歐姆4A條采用SOT23 - 6L STRIPFET二功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 256K |
| 代理商： | STT5NF30L |
3/8
STT5NF30L
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
Parameter
g
fs
(1)
Forward Transconductance
V
DS
= 10 V
,
I
D
= 2 A
C
iss
C
oss
C
rss
Reverse Transfer
Capacitance
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
Min.
Typ.
3
Max.
Unit
S
Input Capacitance
Output Capacitance
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
330
90
40
pF
pF
pF
Parameter
Test Conditions
V
DD
= 15 V, I
D
= 2 A
R
G
= 4.7
V
GS
= 4.5 V
(see test circuit, Figure 3)
V
DD
= 24 V, I
D
= 4 A,
V
GS
= 5 V
Min.
Typ.
11
100
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
6.5
3.6
2
9
nC
nC
nC
Parameter
Test Conditions
V
DD
= 15 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 4.5 V
(see test circuit, Figure 5)
Min.
Typ.
25
22
Max.
Unit
ns
ns
Turn-Off Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
4
16
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 4 A, V
GS
= 0
I
SD
= 4 A, di/dt = 100 A/μs,
V
DD
= 20 V, T
j
= 150°C
(see test circuit, Figure 5)
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
35
25
14
ns
nC
A
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