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參數(shù)資料
| 型號(hào)： | STT5NF30L |
| 英文描述： | N-CHANNEL 30V 0.039 OHM 4A SOT23-6L STRIPFET II POWER MOSFET |
| 中文描述： | N溝道30V的0.039歐姆4A條采用SOT23 - 6L STRIPFET二功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 256K |
| 代理商： | STT5NF30L |
STT5NF30L
2/8
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
E
AS
(1)
Single Pulse Avalanche Energy
()Pulse width limited by safe operating area
(1) Starting T
j
=25
°C,
I
d
= 2 A, V
DD
= 15V
.
THERMAL DATA
Rthj-amb
T
l
T
stg
ON/OFF
Symbol
V
(BR)DSS
Parameter
Value
Unit
30
V
30
V
± 16
V
4
A
2.5
A
16
A
1.6
W
50
mJ
Thermal Resistance Junction-ambient
Max
78
°C/W
Max. Operating Junction Temperature
- 55 to 150
°C
Storage Temperature
- 55 to 150
°C
Parameter
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
30
Typ.
Max.
Unit
V
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125°C
V
GS
= ± 16V
1
μA
10
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±100
μA
V
GS(th)
R
DS(on)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 2 A
V
GS
= 5 V, I
D
= 2 A
1
V
Static Drain-source On
Resistance
0.039
0.046
0.050
0.060
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