參數(shù)資料
型號: STS5N150
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET⑩ POWER MOSFET
中文描述: N溝道150伏- 0.045歐姆- 5A條的SO - 8低柵極電荷STripFET⑩功率MOSFET
文件頁數(shù): 3/6頁
文件大?。?/td> 114K
代理商: STS5N150
3/6
STS5N150
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 75 V
R
G
= 4.7
(Resistive Load, Figure 1)
I
D
= 2.5 A
V
GS
= 10 V
TBD
TBD
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 120V I
D
= 5A V
GS
= 10V
(see test circuit, Figure 2)
TBD
TBD
TBD
28
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 75 V
R
G
= 4.7
,
(Resistive Load, Figure 1)
I
D
= 2.5 A
V
GS
= 10 V
TBD
TBD
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
5
20
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 5 A
V
GS
= 0
1.2
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 5 A
V
DD
= 50 V
(see test circuit, Figure 3)
di/dt = 100A/μs
T
j
= 150°C
TBD
TBD
TBD
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
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