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參數(shù)資料
| 型號： | STS4PF20V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | P-CHANNEL 20V - 0.090 ohm - 4A SO- 2.7V-DRIVE STripFET⑩ II POWER MOSFET |
| 中文描述： | P通道20V的- 0.090歐姆- 4A條的SO - 2.7 -驅(qū)動STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 267K |
| 代理商： | STS4PF20V |
1/8
June 2002
.
STS4PF20V
P-CHANNEL 20V - 0.090
- 4A SO-8
2.7V-DRIVE STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.090
@ 4.5 V
I
TYPICAL R
DS
(on) = 0.100
@ 2.7 V
I
ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
MOBILE PHONE APPLICATIONS
I
DC-DC CONVERTERS
I
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
TYPE
V
DSS
R
DS(on)
I
D
STS4PF20V
20 V
< 0.11
( @ 4.5 V )
< 0.135
( @ 2.7 V )
4 A
SO-8
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
(
)
Pulse width limited by safe operating area.
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
Parameter
Value
20
20
± 12
4
2.5
16
2.5
Unit
V
V
V
A
A
A
W
INTERNAL SCHEMATIC DIAGRAM
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