參數(shù)資料
型號(hào): STS15N4LLF3
廠商: 意法半導(dǎo)體
英文描述: N-channel 40V - 0.0042ohm - 15A - SO-8 STripFET TM Power MOSFET
中文描述: N溝道40V的- 0.0042ohm - 15A條-的SO - 8 STripFET商標(biāo)功率MOSFET
文件頁(yè)數(shù): 4/12頁(yè)
文件大?。?/td> 299K
代理商: STS15N4LLF3
Electrical characteristics
STS15N4LLF3
4/12
2
Electrical characteristics
(T
J
= 25 °C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250μA, V
GS
= 0
40
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= max rating,
V
DS
=max rating @125°C
10
100
μA
μA
I
GSS
Gate body leakage
Current (V
DS
= 0)
V
GS
= ±16V
±
200
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 7.5A
V
GS
= 4.5V, I
D
= 7.5A
0.0042
0.005
0.005
0.007
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f=1 MHz,
V
GS
= 0
2530
574
29
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 20V, I
D
= 15A
V
GS
= 4.5V
(see Figure 13)
21.5
6.9
8.2
28
nC
nC
nC
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
1
3
5
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 20V, I
D
= 7.5A,
R
G
= 4.7
,
V
GS
= 10V
(see Figure 15)
17
25
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
= 20V, I
D
= 7.5A,
R
G
= 4.7
,
V
GS
= 10V
(see Figure 15)
62
9
ns
ns
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