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參數(shù)資料
| 型號(hào)： | STR73XF_0609 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces |
| 中文描述： | ARM7TDMI的32位微控制器的閃存，3倍的CAN，4個(gè)UART，20定時(shí)器，ADC和12通信設(shè)備。接口 |
| 文件頁(yè)數(shù)： | 39/53頁(yè) |
| 文件大?。?/td> | 764K |
| 代理商： | STR73XF_0609 |
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STR73xF
Electrical parameters
39/53
3.3.5
I/O port pin characteristics
General Characteristics
Subject to general operating conditions for V
DD
and T
A
unless otherwise specified.
Table 21.
Notes
:
1.
Data based on characterization results, not tested in production.
2.
When the current limitation is not possible, the V
absolute maximum rating must be respected, otherwise
refer to I
specification. A positive injection is induced by V
>V
33
while a negative injection is
induced by V
IN
<V
SS
. Refer to
Section 3.2 on page 23
for more details.
Leakage could be higher than max. if negative current is injected on adjacent pins.
3.
4.
Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of
the I/O for example or an external pull-up or pull-down resistor. Data based on design simulation and/or
technology characteristics, not tested in production.
6.
The R
pull-up and R
pull-down equivalent resistor are based on a resistive transistor (corresponding
I
PU
and I
PD
current characteristics described in
Figure 19
).
I/O static characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
IL
Input low level voltage
1)
TTL ports
0.8
V
V
IH
Input high level voltage
1)
2.0
I
INJ(PIN)
Injected Current on any I/O pin
±10
mA
Σ
I
INJ(PIN)
2)
Total injected current (sum of all
I/O and control pins)
±75
mA
I
lkg
Input leakage current
3)
V
SS
≤
V
IN
≤
V
DD
±1
μ
A
I
S
Static current consumption
4)
Floating input
mode
200
μA
R
PU
Weak pull-up equivalent
resistor
5)
V
IN
=
V
SS
55
120
220
k
R
PD
Weak pull-down equivalent
resistor
5)
V
IN
=
V
DD
55
120
220
k
C
IO
I/O pin capacitance
5
pF
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