參數(shù)資料
型號: STPS16H100CG-TR
廠商: STMICROELECTRONICS
元件分類: 整流器
英文描述: 8 A, 100 V, SILICON, RECTIFIER DIODE
封裝: D2PAK-3
文件頁數(shù): 3/7頁
文件大?。?/td> 110K
代理商: STPS16H100CG-TR
STPS16H100CT/CG/CFP/CR
3/7
0
20
40
60
80
100
120
140
160
180
200
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C=25°C
T
C=75°C
T
C=125°C
I (A)
M
IM
t
δ=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus
overload
duration
(maximum
values)
(TO-220AB, DPAK, IPAK).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
t (s)
P
Zth(j-c) / Rth(j-c)
T
δ=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
Fig. 6-1: Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
DPAK & IPAK).
0
10
20
30
40
50
60
70
80
90
100
110
120
1.E-03
1.E-02
1.E-01
1.E+00
t(s)
T
C=25°C
T
C=75°C
T
C=125°C
IM
t
δ=0.5
I (A)
M
Fig. 5-2: Non repetitive surge peak forward current
versus
overload
duration
(maximum
values)
(TO-220FPAB).
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t (s)
P
Zth(j-c) / Rth(j-c)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
Fig. 6-2:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220FPAB).
0
0.2
0.4
0.6
0.8
1
1.2
0
25
50
75
100
125
150
T (°C)
j
P(t )
P
(25°C)
ARM p
ARM
Fig. 4: Normalized avalanche power derating
versus junction temperature.
0.001
0.01
0.1
0.01
1
0.1
10
100
1000
1
t (s)
p
P(t )
P
(1s)
ARM p
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
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