參數(shù)資料
型號: STPS16H100CG-TR
廠商: STMICROELECTRONICS
元件分類: 整流器
英文描述: 8 A, 100 V, SILICON, RECTIFIER DIODE
封裝: D2PAK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 110K
代理商: STPS16H100CG-TR
STPS16H100CT/CG/CFP/CR
2/7
Symbol
Parameter
Value
Unit
Rth (j-c)
Junction to ambient
TO-220AB / D
2PAK/I2PAK
Per diode
1.6
°C/W
TO-220FPAB
4
TO-220AB / D
2PAK/I2PAK
Total
1.1
°C/W
TO-220FPAB
3.5
Rth (c)
TO-220AB / D
2PAK/I2PAK
Coupling
0.6
°C/W
TO-220FPAB
3
THERMAL RESISTANCES
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR *
Reverse leakage Current
Tj = 25°C
VR =VRRM
3.6
A
Tj = 125°C
1.6
5
mA
VF**
Forward Voltage drop
Tj = 25°C
IF = 8 A
0.77
V
Tj = 125
°CIF = 8 A
0.59
0.64
Tj = 25°C
IF = 16 A
0.88
Tj = 125°C
IF = 16 A
0.67
0.73
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Pulse test :
* tp=5ms,
δ <2%
** tp = 380 s,
δ <2%
To evaluate the conduction losses use the following equation :
P = 0.55 x IF(AV) + 0.011 x IF
2
(RMS)
0
1
2
3
4
5
6
7
012
34567
89
10
I
(A)
F(AV)
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
δ = 1
P
(W)
F(AV)
T
δ=tp/T
tp
Fig. 1: Conduction losses versus average current.
0
1
2
3
4
5
6
7
8
9
0
25
50
75
100
125
150
175
T
(°C)
amb
Rth
(j-a)=Rth(j-c)
Rth
(j-a)=50°C/W
TO-220AB/DPAK/IPAK
I
(A)
F(AV)
T
δ=tp/T
tp
Fig. 2: Average forward current versus ambient
temperature (
δ=0.5).
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
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