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參數(shù)資料
| 型號(hào)： | STP9NK60ZD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET |
| 中文描述： | N溝道600V的- 0.85？ -第7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET的 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 353K |
| 代理商： | STP9NK60ZD |
3/12
STP9NK60ZD - STF9NK60ZD - STB9NK60ZD
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100μA
R
DS(on)
Static Drain-source On
Resistance
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
C
oss eq.
(3)
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 1mA, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20V
±10
μA
2.5
3.5
4.5
V
V
GS
= 10V, I
D
= 3.5 A
0.85
0.95
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 3.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
5.3
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1110
135
30
pF
pF
pF
Equivalent Output Capacitance
V
GS
= 0V, V
DS
= 0V to 480V
72
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 7 A,
V
GS
= 10V
Min.
Typ.
22
17
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
41
8.7
21
53
nC
nC
nC
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 3.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 7 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
42
15
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
11
8
20
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
7
28
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 7 A, V
GS
= 0
I
SD
= 7 A, di/dt = 100A/μs
V
DD
= 30V, T
j
= 25
°
C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
150
663
8.5
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 7 A, di/dt = 100A/μs
V
DD
= 30V, T
j
= 150
°
C
(see test circuit, Figure 5)
194
935
9.6
ns
nC
A
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| STP9NK60ZFD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 600V 0.85 OHM 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH POWER MOSFET |
| STP9NK60ZFDFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET |
| STP9NK60ZFP | 功能描述:MOSFET N-Ch, 600V-0.85ohms 7A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP9NK65Z | 功能描述:MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP9NK65Z_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V - 1 - 6.4 A TO-220 / TO-220FP |
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