參數(shù)資料
型號： STC05IE150HV
廠商： 意法半導體
英文描述： Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm
中文描述： 發(fā)射極開關(guān)雙極晶體管內(nèi)酰胺酶1500伏特- 5阿- 0.12歐姆
文件頁數(shù)： 1/7頁
文件大?。?/td> 121K
代理商： STC05IE150HV
November 2006
1/7
7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
STC05IE150HV
Emitter Switched Bipolar Transistor
ESBT
1500 V - 5 A - 0.12
Features
■
High voltage / high current Cascode
configuration
■
Low equivalent on resistance
■
Very fast-switch, up to 150 kHZ
■
Squared rbsoa, up to 1500 V
■
Very low C
ISS
driven by R
G
= 47
■
Very low turn-off cross over time
■
In compliance with the 2002/93/EC European
Directive
Applications
■
Aux SMPS for three phase mains
■
Sepic PFC
Description
The
Monolithic ESBT Technology, aimed to provide
best performance in high frequency / high voltage
applications. it is designed for use in Gate Driven
based topologies.
STC05IE150HV
is
manufactured
in
PRELIMINARY DATA
Internal Schematic Diagram
V
CS(ON)
I
C
R
CS(ON)
0.6 V
5 A
0.12
W
TO247-4LHV
1
234
www.st.com
Order Codes
Part Number
Marking
Package
Packaging
STC05IE150HV
C05IE150HV
TO247-4LHV
TUBE
Rev 2
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STC08DE150HP 功能描述:兩極晶體管 - BJT Hybrid emitter transistor ESBT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
STC08DE150HV 功能描述:兩極晶體管 - BJT Hybrid emitter switch bipolar ESBT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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