參數(shù)資料
型號： STP6NB80FP
廠商： 意法半導體
英文描述： N-Channel 800V-1.6Ω-5.7A- TO-220/TO-220FP PowerMESH MOSFET(N溝道MOSFET)
中文描述： N溝道800V的-1.6Ω- 5.7A - TO-220/TO-220FP PowerMESH MOSFET的（不適用溝道MOSFET的）
文件頁數(shù)： 1/6頁
文件大?。?/td> 45K
代理商： STP6NB80FP
STP6NB80
STP6NB80FP
N - CHANNEL 800V - 1.6
- 5.7A - TO-220/TO-220FP
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1.6
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHETESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances. The
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
new
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCHMODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
INTERNAL SCHEMATIC DIAGRAM
September 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP6NB80
STP6NB80FP
800
800
±
30
5.7(*)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
(
*) Limited only maximum temperatureallowed
V
V
V
A
A
A
W
5.7
3.6
22.8
125
1.0
4
2
22.8
40
0.32
4
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
≤
5.76 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 1.9
< 1.9
I
D
STP6NB80
STP6NB80FP
800 V
800 V
5.7 A
5.7 A
1/6
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