參數(shù)資料
型號(hào)： STP60NF10
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 100V - 0.019ohm - 80A D2PAK/TO-220 STripFET II POWER MOSFET
中文描述： N溝道100V的- 0.019ohm - 80A條D2PAK/TO-220 STripFET二功率MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 108K
代理商： STP60NF10
STP60NE10
STP60NE10FP
N - CHANNEL 100V - 0.016
- 60A TO-220/TO-220FP
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.016
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process.The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP60NE10
STP60NE10FP
100
100
±
20
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
V
V
V
A
A
A
W
60
42
240
160
1.06
30
21
120
50
0.37
2000
W/
o
C
V
V/ns
o
C
o
C
V
ISO
dv/dt
T
stg
T
j
7
-65 to 175
175
(
1
) I
SD
≤
60 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.022
< 0.022
I
D
STP60NE10
STP60NE10FP
100 V
100 V
60 A
30 A
May 1999
TO-220
TO-220FP
1
2
3
1
2
3
1/9
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