- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382564 > STP62NS04Z (意法半導體) N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET PDF資料下載
參數(shù)資料
| 型號： | STP62NS04Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL CLAMPED 12.5m - 62A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET |
| 中文描述： | N通道鉗位1250萬- 62A條至220充分保護MOSFET的網(wǎng)格密胺 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 249K |
| 代理商： | STP62NS04Z |
1/8
March 2004
.
STP62NS04Z
N-CHANNEL CLAMPED 12.5m
- 62A TO-220
FULLY PROTECTED MESH OVERLAY MOSFET
INTERNAL SCHEMATIC DIAGRAM
■
TYPICAL R
DS
(on) = 0.0125
■
100% AVALANCHE TESTED
■
LOW CAPACITANCE AND GATE CHARGE
■
175
o
C MAXIMUM JUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using the latest
advanced Company’s Mesh Overlay process which is
based on a novel strip layout.
The inherent benefits of the new technology coupled with
the extra clamping capabilities make this product
particularly suitable for the harshest operation conditions
such as those encountered in the automotive
environment. Any other application requiring extra
ruggedness is also recommended.
APPLICATIONS
■
ABS, SOLENOID DRIVERS
■
POWER TOOLS
Ordering Information
SALES TYPE
STP62NS04Z
TYPE
V
DSS
R
DS(on)
I
D
STP62NS04Z
CLAMPED
<0.015
62 A
MARKING
P62NS04Z
PACKAGE
TO-220
PACKAGING
TUBE
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DG
Drain-gate Voltage
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DG
Drain Gate Current (continuous)
I
GS
Gate SourceCurrent (continuous)
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
V
ESD
ESD (HBM - C = 100pF, R=1.5 k
)
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
40A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 20A, V
DD
= 20V
Parameter
Value
CLAMPED
CLAMPED
CLAMPED
62
37.5
± 50
± 50
248
110
0.74
8
500
8
Unit
V
V
V
A
A
mA
mA
A
W
W/°C
V/ns
mJ
kV
-55 to 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP6LNC60 | N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| STP6LNC60FP | N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| STP6N50FI | ; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STP6N50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP6NA60FP | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOS晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP62NS04Z_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel clamped 12.5mOHM - 62A - TO-220 Fully protected MESH OVERLAY Power MOSFET |
| STP6308 | 制造商:STANSON 制造商全稱:STANSON 功能描述:STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. |
| STP6-420 | 制造商:Carlo Gavazzi 功能描述: |
| STP6-430 | 制造商:Carlo Gavazzi 功能描述: |
| STP65NF06 | 功能描述:MOSFET N-channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。