參數(shù)資料
型號(hào): STP60N05-14
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述: ? -通道增強(qiáng)型功率MOS器件
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 77K
代理商: STP60N05-14
STP60N05-14
STP60N06-14
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.012
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
I
VERY LOW R
DS (on)
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.014
< 0.014
I
D
STP60N05-14
STP60N06-14
50 V
60 V
60 A
60 A
March 1996
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP60N05-14
50
50
STP60N06-14
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-Source Voltage (V
gs
= 0)
Drain-Gate Voltage (R
gs
= 20 K
)
Gate-Source Voltage
Drain-Current (continuous) at T
c
= 25
o
C
Drain-Current (continuous) at T
c
= 100
o
C
Drain-Current (Pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max Operating Junction Temperature
(
)Pulse width limited by safe operating area
60
60
V
V
V
A
A
A
±
20
60
50
240
150
1
-
W/
o
C
o
C
V
o
C
o
C
V
ISO
T
stg
T
j
-65 to 175
175
1/5
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