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參數(shù)資料
| 型號： | STP60NS04Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Clamped 10mΩ-60A- TO-220 Fully Protected MESH OVERLAYTM MOSFET(N溝道MOSFET) |
| 中文描述： | N通道鉗位10mΩ- 60A型至220充分保護(hù)網(wǎng)眼OVERLAYTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 88K |
| 代理商： | STP60NS04Z |
STP60NS04Z
N - CHANNEL CLAMPED 10m
- 60A - TO-220
FULLY PROTECTED MESH OVERLAY
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.010
I
100%AVALANCHE TESTED
I
LOW CAPACITANCEAND GATE CHARGE
I
175
o
C MAXIMUMJUNCTION
TEMPERATURE
DESCRIPTION
This fully clamped Mosfet is produced by using
the latest advanced Company’s Mesh Overlay
processwhich is basedon a novel strip layout.
The inherent benefits of the new technology
coupledwith the extra clamping capabilities make
this product particularly suitable for the harshest
operation conditions such as those encountered
in
the
automotive
environment.
application requiring extra ruggedness is also
recommended.
Any
other
APPLICATIONS
I
ABS, SOLENOID DRIVERS
I
MOTOR CONTROL
I
DC-DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
November 1998
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DG
V
GS
I
D
I
D
I
DG
I
GS
I
DM
(
)
P
tot
Parameter
Value
CLAMPED
CLAMPED
CLAMPED
60
42
±
50
±
50
240
140
0.93
2
4
4
-65 to 175
-40 to 175
Unit
V
V
V
A
A
mA
mA
A
W
W/
o
C
kV
kV
kV
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Gate Current (continuous)
Gate Source Current (continuous)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
ESD
(G-S)
Gate-Source ESD (HBM - C= 100pF, R=1.5 k
)
V
ESD
(G-D)
Gate-Drain ESD (HBM - C= 100pF, R=1.5 k
)
V
ESD
(D-S)
Drain-Source ESD (HBM - C= 100pF, R=1.5 k
)
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
(
1
) I
SD
≤
60 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.015
I
D
STP60NS04Z
CLAMPED
60 A
1/8
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP60NS04ZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET |
| STP60NS04ZB_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel clamped - 10mohm - 60A - TO-220 Fully protected Mesh Overlay Power MOSFET |
| STP6-1025 | 制造商:Carlo Gavazzi 功能描述: |
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