參數(shù)資料
型號(hào): STP55NF03L
廠(chǎng)商: 意法半導(dǎo)體
英文描述: N-CHANNEL 30V - 0.01 ohm - 55A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET
中文描述: N溝道30V的- 0.01歐姆- 55A條TO-220/D2PAK/I2PAK STripFET⑩二功率MOSFET
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 85K
代理商: STP55NF03L
3/8
STP55NF03L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
(
)
Pulse width limitedby safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time Rise Time
V
DD
= 15 V
R
G
= 4.7
(see test circuit, Figure 3)
I
D
= 27.5 A
V
GS
= 4.5 V
28
400
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=24V I
D
=55A V
GS
=4.5V
20
7
10
27
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
turn-off Delay Time
Fall Time
V
DD
= 15 V
R
G
= 4.7
(see test circuit, Figure 3)
I
D
= 27.5 A
V
GS
= 4.5 V
25
50
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
55
220
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 55 A
V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
=55 A
V
DD
= 30 V
(see test circuit, Figure 5)
di/dt = 100 A/
μ
s
T
j
= 150
°
C
70
160
4.5
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Thermal Impedance
Safe Operating Area
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