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參數(shù)資料
| 型號(hào)： | STP6NB25FP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET |
| 中文描述： | N溝道250V - 0.9ohm - 6A條TO-220/TO-220FP PowerMesh MOSFET的 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | STP6NB25FP |
1/9
Jun 2000
STP6NB25
STP6NB25FP
N-CHANNEL 250V - 0.9
- 6A TO-220/TO-220FP
PowerMesh
MOSFET
I
TYPICAL R
DS
(on) = 0.9
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprieraty edge termi-
nation structure, gives the lowest R
DS(on)
per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY (UPS)
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM , INDUSTRIAL AND CONSUMER
ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP6NB25
250 V
< 1.1
6 A
STP6NB25FP
250 V
< 1.1
3.7 A
Parameter
Value
Unit
STP6NB25
STP6NB25FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
250
V
250
V
Gate- source Voltage
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
±
30
V
6
3.7
A
3.8
2.3
A
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
24
24
A
75
30
W
0.6
0.24
W/
°
C
V/ns
dv/dt (1)
Peak Diode Recovery voltage slope
5.5
V
ISO
Insulation Withstand Voltage (DC)
-
2000
T
stg
Storage Temperature
–60 to 150
°
C
°
C
T
j
Max. Operating Junction Temperature
150
(1)I
SD
≤
6A, di/dt
≤
100A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
1
2
3
1
2
3
TO-220
TO-220FP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP6NB25 | N-CHANNEL 250V - 0.9ohm - 6A TO-220/TO-220FP PowerMesh MOSFET |
| STP80NF55L-06 | N - CHANNEL 55V - 0.005 ohm - 80A TO-220 STripFET POWER MOSFET |
| STP80NF55L-08 | N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET⑩ II POWER MOSFET |
| STPC0310BTC3 | PC Compatible Embeded Microprocessor |
| STPCCONSUMER | CONNECTOR ACCESSORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP6NB50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP6NB50FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP6NB80 | 制造商:STMicroelectronics 功能描述: |
| STP6NB80FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.6 Ohm - 5.7A - TO-220/TO-220FP |
| STP6NB90 | 功能描述:MOSFET N-CH 900V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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