參數(shù)資料
型號(hào)： STP32N06L
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述： ? -通道增強(qiáng)型功率MOS器件
文件頁數(shù)： 2/10頁
文件大?。?/td> 201K
代理商： STP32N06L
THERMAL DATA
TO-220
ISOWATT220
R
thj-case
Thermal Resistance Junction-case
Max
1.43
3.75
o
C/W
o
C/W
o
C/W
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
Repetitive Avalanche Energy
(pulse width limited by T
j
max,
δ
< 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100
C, pulse width limited by T
j
max,
δ
< 1%)
32
A
E
AS
180
mJ
E
AR
45
mJ
I
AR
22
A
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
60
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating x 0.8
V
GS
=
±
15 V
T
c
= 125
o
C
1
10
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
ON (
)
Symbol
Parameter
Test Conditions
I
D
= 250
μ
A
I
D
= 16 A
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
1
1.6
2.5
V
R
DS(on)
Static Drain-source On
Resistance
On State Drain Current
V
GS
= 5 V
0.045
0.055
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
32
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 16 A
10
22
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
980
320
80
1300
450
110
pF
pF
pF
STP36N06L/FI
2/10
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參數(shù)描述
STP32N06LFI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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