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參數(shù)資料
| 型號： | STP2202ABGA |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 356K |
| 代理商： | STP2202ABGA |
1/10
ADVANCED DATA
January 2003
STP22NM50 - STP22NM50FP
STB22NM50 - STB22NM50-1
N-CHANNEL 500V - 0.16
- 20A TO-220/FP/D
2
PAK/I
2
PAK
MDmeshPower MOSFET
I
TYPICAL R
DS
(on) = 0.16
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
100% AVALANCHE TESTED
I
LOW INPUT CAPACITANCE AND GATE CHARGE
I
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
R
ds(on)
*Q
g
I
D
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
500 V
500 V
500 V
500 V
<0.215
<0.215
<0.215
<0.215
6.4
*nC
6.4
*nC
6.4
*nC
6.4
*nC
20 A
20 A
20 A
20 A
Parameter
Value
Unit
STP(B)22NM50(-1)
STP22NM50FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
±30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
20
20(*)
A
12.6
12.6(*)
A
Drain Current (pulsed)
80
80(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
192
45
W
1.2
0.36
W/°C
V/ns
dv/dt(1)
V
ISO
T
stg
T
j
15
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
20A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*)Limited only by maximum temperature allowed
TO-220
1
2
3
TO-220FP
123
I2PAK
(Tabless TO-220)
1
3
D
2
PAK
I
NTERNAL SCHEMATIC DIAGRAM
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