參數(shù)資料
型號(hào)： STP21N06L
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
中文描述： ? -通道增強(qiáng)型低閾值功率MOS器件
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 197K
代理商： STP21N06L
STP21N06L
STP21N06LFI
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.065
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
LOGIC LEVEL COMPATIBLE INPUT
I
175
o
C OPERATING TEMPERATURE
I
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.085
< 0.085
I
D
STP21N06L
STP21N06LFI
60 V
60 V
21 A
14 A
1
2
3
TO-220
ISOWATT220
July 1993
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP21N06L
STP21N06LFI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
60
V
V
DGR
60
V
V
GS
±
15
V
I
D
21
14
A
I
D
14
9
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
84
84
A
80
35
W
Derating Factor
0.53
0.23
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
1
2
3
1/10
相關(guān)PDF資料
PDF描述
STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP22NM50FP N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh⑩Power MOSFET
STF22NM50 Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:5mA; Current, It av:4A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes
STP2200ABGA-100 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
STP2200ABGA-83 Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP21N06LFI 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP21N65M5 功能描述:MOSFET N-channel 650 V MDMesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP21N90K5 功能描述:MOSFET N-Ch 900V 0.25 Ohm 18.5A SuperMESH 5 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP21NM50N 功能描述:MOSFET N-Ch 500 V 0.15 Ohm 18 A 2nd Gen MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP21NM50N_07 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 500V - 0.15ヘ - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⑩ Power MOSFET
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