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參數(shù)資料
| 型號(hào)： | STF22NM50 |
| 英文描述： | Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:5mA; Current, It av:4A; Leaded Process Compatible:Yes; Mounting Type:Through Hole RoHS Compliant: Yes |
| 中文描述： | N溝道500伏特- 0.16歐姆- 20甲TO-220/TO-220FP/D2PAK/I2PAK MDMesh功率MOSFET |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 356K |
| 代理商： | STF22NM50 |
1/10
ADVANCED DATA
January 2003
STP22NM50 - STP22NM50FP
STB22NM50 - STB22NM50-1
N-CHANNEL 500V - 0.16
- 20A TO-220/FP/D
2
PAK/I
2
PAK
MDmeshPower MOSFET
I
TYPICAL R
DS
(on) = 0.16
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
100% AVALANCHE TESTED
I
LOW INPUT CAPACITANCE AND GATE CHARGE
I
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh is a new revolutionary MOSFET tech-
nology that associates the Multiple Drain process with
the Company’s PowerMESH horizontal layout. The
resulting product has an outstanding low on-resis-
tance, impressively high dv/dt and excellent avalanche
characteristics. The adoption of the Company’s propri-
etary strip technique yields overall dynamic perfor-
mance that is significantly better than that of similar
competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing sys-
tem miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
R
ds(on)
*Q
g
I
D
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
500 V
500 V
500 V
500 V
<0.215
<0.215
<0.215
<0.215
6.4
*nC
6.4
*nC
6.4
*nC
6.4
*nC
20 A
20 A
20 A
20 A
Parameter
Value
Unit
STP(B)22NM50(-1)
STP22NM50FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
500
V
500
V
Gate- source Voltage
±30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
20
20(*)
A
12.6
12.6(*)
A
Drain Current (pulsed)
80
80(*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
192
45
W
1.2
0.36
W/°C
V/ns
dv/dt(1)
V
ISO
T
stg
T
j
15
Insulation Winthstand Voltage (DC)
--
2000
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
(1)I
SD
≤
20A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*)Limited only by maximum temperature allowed
TO-220
1
2
3
TO-220FP
123
I2PAK
(Tabless TO-220)
1
3
D
2
PAK
I
NTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STF22NM60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh⑩Power MOSFET |
| STF22NM60N | 功能描述:MOSFET N-channel 600 V 0.190 16A MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STF23N80K5 | 功能描述:MOSFET N-CH 800V 16A 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:800V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:16A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:280 毫歐 @ 8A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時(shí)的柵極電荷（Qg）:33nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:1000pF @ 100V 功率 - 最大值:35W 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商器件封裝:TO-220FP 標(biāo)準(zhǔn)包裝:50 |
| STF23NM50N | 功能描述:MOSFET N-Ch 500V 0.162 Ohm 17A MDmesh II PWR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STF23NM60N | 功能描述:MOSFET N-Channel 600V Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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