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參數(shù)資料
| 型號(hào)： | STP130NH02L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 24V - 0.0034 з - 120A DPAK/TO-220 STripFET⑩ III POWER MOSFET FOR DC-DC CONVERSION |
| 中文描述： | N溝道24V的- 0.0034з - 120A條?PAK/TO-220 STripFET⑩三功率MOSFET的DC - DC轉(zhuǎn)換 |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 321K |
| 代理商： | STP130NH02L |
3/13
STB130NH02L STP130NH02L
Table 8:
SWITCHING ON
Table 9:
SWITCHING OFF
Table 10:
SOURCE DRAIN DIODE
(1)
Garanted when external Rg=4.7
and t
< t
.
(5)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
2
) Value limited by wire bonding
(6)
Q
C
*
V
C
C
C
See Appendix A
(3)
Pulse width limited by safe operating area.
(7)
Gate charge for synchronous operation
(
4
) Starting T
j
= 25
o
C, I
D
= 45A, V
DD
= 10V .
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 10 V
R
G
= 4.7
(Resistive Load, Figure )
I
D
= 45 A
V
GS
= 10 V
14
224
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=10 V I
D
=90 A V
GS
=10 V
69
13
9
93
nC
nC
nC
Q
oss(6)
Output Charge
V
DS
= 16 V V
GS
= 0 V
27
nC
Q
gls(7)
Third-quadrant Gate Charge
V
DS
< 0 V V
GS
= 10 V
64
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 10 V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 45 A
V
GS
= 10 V
69
40
54
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain Current
Source-drain Current (pulsed)
90
360
A
A
V
SD
(5)
Forward On Voltage
I
SD
= 45 A V
GS
= 0
1.3
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 90 A
V
DD
= 15 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
47
58
2.5
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Figure 3:
Safe Operating Area
Figure 4:
Thermal Impedance
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP130NH02L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 24V - 0.0034Ω - 120A - TO-220 STripFET? Power MOSFET for DC-DC conversion |
| STP130NS04ZB | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL CLAMPED - 7 mohm - 80A TO-220/D2PAK/TO-247 FULLY PROTECTED MESH OVERLAY MOSFET |
| STP135N10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 100V - 0.007 ohm - 135A DPAK/TO-220 LOW GATE CHARGE STripFET POWER MOSFET |
| STP13N10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) | TO-220AB |
| STP13N10L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 13A I(D) | TO-220AB |
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