參數(shù)資料
型號(hào)： STP14NF06
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 60V - 0.1ohm - 14A TO-220 STripFET⑩ POWER MOSFET
中文描述： N溝道60V的- 0.1ohm - 14A條，220 STripFET⑩功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 247K
代理商： STP14NF06
1/8
December 2000
STP14NF06
N-CHANNEL 60V - 0.1
- 14A TO-220
STripFET POWER MOSFET
(1) I
SD
≤
7A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25°C, I
D
= 114A, V
DD
= 15V
I
TYPICAL R
DS
(on) = 0.1
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOW GATE CHARGE AT 100
°C
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature Size"
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
E
AS
(2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP14NF10
60 V
< 0.12
14 A
Parameter
Value
Unit
60
V
60
V
±20
V
14
A
10
A
56
A
45
W
0.3
6
W/°C
V/ns
50
mJ
–65 to 175
°C
175
°C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
PDF描述
STP14NF10 N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
STP14NF10FP N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
STP14NF12 N-CHANNEL 120V - 0.16ohm - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET⑩ POWER MOSFET
STP14NF12FP N-CHANNEL 120V - 0.16ohm - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET⑩ POWER MOSFET
STP15N05L N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP14NF10 功能描述:MOSFET N Ch 100V 0.115 OHM 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP14NF10FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.115ヘ - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET⑩ II Power MOSFET
STP14NF12 功能描述:MOSFET N-Ch, 120V-0.16ohms 14A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP14NF12_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 120V - 0.16OHM - 14A - TO-220/TO-220FP Low gate charge STripFET TM II Power MOSFET
STP14NF12FP 功能描述:MOSFET N-Ch, 120V-0.16ohms 14A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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