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參數(shù)資料
| 型號(hào)： | STP120NH03L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-channel 30V - 0.005ohm - 60A - TO-220 / D2PAK / I2PAK STripFET Power MOSFET for DC-DC conversion |
| 中文描述： | N溝道30V的- 0.005ohm - 60A章-到220 / D2PAK封裝/ I2PAK STripFET功率MOSFET的DC - DC轉(zhuǎn)換 |
| 文件頁數(shù)： | 4/17頁 |
| 文件大?。?/td> | 495K |
| 代理商： | STP120NH03L |
Electrical characteristics
STB120NH03L - STI120NH03L - STP120NH03L
4/17
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250
μ
A, V
GS
= 0
30
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,
T
C
=125°C
1
10
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±
100
μA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250μA
1
1.8
3
V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 30A
V
GS
= 5V, I
D
= 30A
0.005
0.006
0.0055
0.0105
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
4100
680
70
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Off voltage rise time
Fall time
V
DD
= 15V, I
D
= 30A,
R
G
= 4.7
,
V
GS
= 10V
(see
Figure 12
)
16
95
48
23
ns
ns
ns
ns
Rg
Gate input resistance
f = 1MHz gate DC bias=0
test signal level=20mV
open drain
1.3
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=15V, I
D
= 60A
V
GS
=10V
(see
Figure 13
)
57
12
7
77
nC
nC
nC
Q
oss (1)
1.
Qoss = Coss*
V
IN
, Coss = Cgd + Cds. See power losses calculation
Gate charge for synchronous operation.
Output charge
V
DS
= 24V, V
GS
= 0
27
ns
Q
gls (2)
2.
Third-quadrant gate
charge
V
DS
< 0, V
GS
= 0V
55
ns
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