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參數(shù)資料
| 型號(hào)： | STP11NM60AFP |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 0.4ohm - 11A條TO-220/TO-220FP/I2PAK的MDmesh⑩功率MOSFET |
| 文件頁(yè)數(shù)： | 3/11頁(yè) |
| 文件大?。?/td> | 367K |
| 代理商： | STP11NM60AFP |
3/11
STP11NM60A/STP11NM60AFP/STB11NM60A-1
ELECTRICAL CHARACTERISTICS
(TCASE
=25°C UNLESS OTHERWISE SPECIFIED)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 5.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
10
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Gate Input Resistance
1211
248
21
pF
pF
pF
C
oss eq.
(3)
V
GS
= 0V, V
DS
= 0V to 480V
116
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
1.9
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 5.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
V
DD
= 480V, I
D
= 11 A,
V
GS
= 10V
Min.
Typ.
14
15
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
35
9
14
49
nC
nC
nC
Parameter
Test Conditions
V
DD
= 480V, I
D
= 11 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
Fall Time
Cross-over Time
39
10
20
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
11
44
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 11 A, V
GS
= 0
I
SD
= 11 A, di/dt = 100A/μs
V
DD
= 100V, T
j
= 150°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
560
5.7
20.5
ns
μC
A
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