- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄381115 > STP10NB20 (意法半導(dǎo)體) N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | STP10NB20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | STP10NB20 |
STP10NB20
STP10NB20FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.3
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
November 1997
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP10NB20
STP10NB20FP
200
200
±
30
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
V
V
V
A
A
A
W
10
6
40
85
0.68
5.5
6
4
40
30
0.24
5.5
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
2000
-65 to 150
150
(
1
) I
SD
≤
10A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
200 V
200 V
R
DS(on)
< 0.40
< 0.40
I
D
STP10NB20
STP10NB20FP
10 A
6 A
1/9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP10NB20FP | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| STP11NB40 | N-Channel 400V-0.48Ω-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP11NB40FP | N-Channel 400V-0.48Ω-10.7A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP120NF04 | N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET |
| STP120NF04_06 | N-channel 40V - 0.0047ohm - 120A TO-220 STripFET II MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP10NB20FP | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| STP10NB50 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 500V - 0.55ohm - 10.6A - TO-220/TO-220FP PowerMESH MOSFET |
| STP10NB50FP | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 500V - 0.55ohm - 10.6A - TO-220/TO-220FP PowerMESH MOSFET |
| STP10NB60SFP | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 10A - 600V - TO-220FP PowerMesh IGBT |
| STP10NC50 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 500V - 0.48ohm - 10A - TO-220/TO-220FP PowerMESH MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。