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參數(shù)資料
| 型號： | STM915-16 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | RF POWER MODULE GSM MOBILE APPLICATIONS |
| 中文描述： | 射頻電源模塊的GSM移動應(yīng)用 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 62K |
| 代理商： | STM915-16 |
ELECTRICALSPECIFICATIONS (
T
case
=
25
°
C, V
S1
,
V
S3
=
8.0 Vdc; V
S2
,
V
S4
=
12.5 Vdc)
Symbol
Parameter
Test Conditions
Value
Unit
Min.
Typ.
Max.
BW
Frequency Range
890
915
MHz
P
OUT
η
Output Power
1,2
Efficiency
1, 2
V
CONT
=
4.0 Vdc
P
OUT
=
16 W
V
CONT
=
0 Vdc
P
IN
=
1 mW
16
W
35
41
%
I
Q1
Leakage Current,
V
S1
, V
S2
Bias Current,
V
S3
Quiescent Current,
V
S4
Control Dynamic
Range
Isolation
Harmonics
1, 2
Input VSWR
1,2
P
IN
=
1 mW
0.5
2.0
mA
I
Q2
V
CONT
=
0 Vdc
P
IN
=
1 mW
140
150
mA
I
Q3
V
CONT
=
0 Vdc
P
IN
=
1 mW
200
250
mA
V
CONT
=
0 to 4.0V
56
dB
V
CONT
=
0 Vdc
P
OUT
=
42 dBm reference
P
OUT
=
+13 dBm to +42 dBm
V
S2, S4
=
0 to 15.6V
14
45
dBm
H
dBc
VSWR
IN
2.0:1
V
CONT
Control Voltage
0
4.0
Vdc
I
CONT
Control Current
1.0
2.0
mA
T
r
Rise Time
1, 2, 4
P
OUT
=
+13 to +42 dBm
30 KHz Bandwidth, 20 MHz above f
0
P
OUT
=
+13 dBm to +42 dBm CW
P
OUT
=
14 to +42 dBm
V
S2
, V
S4
=
10.8 to 15.6 V
Load VSWR
=
6:1 Source VSWR
=
3:1
All phase angles
T
C
=
20 to +60
°
C
VSWR
=
10:1 All phase angles
V
=
15.6Vdc
P
OUT
=
16 W
3)P
OUT
(Reference)
=
42 dBm
4)T
r
measured at 1% to 81% of P
OUT
in watts
1.0
μ
Sec
Noise Power
70
65
dBm
Stability
1, 2
All Spurious outputsmore
than 60dBbelow carrier
Load Mismatch
1,2
No Degradationin Output
Power
Notes: 1) P
IN
=
1.0mW adjust V
CONTROL
forspecified P
OUT
.
2) Pulse Width
=
577
μ
sec.
Repetition rate
=
4.6 msec.
GSM SPECIFIC TESTS
Symbol
Parameter
Test Conditions
Value
Unit
Min.
Typ.
Max.
AM/AM Conversion
Gain
P
IN
=
f
o
(0 dBm)+[f
o
+ 200 kHz (
40 dBm)]
V
CONTROL
adjusted for
P
OUT
=
13, 30, 42 dBm
P
OUT
(f
o
+ 200 kHz)
P
OUT
(f
o
200 kHz)
40
45
dBc
dBc
AM/PM Conversion
P
OUT
=
+13 to + 42 dBm
P
IN
varied +/
.5 dB
4
°
/dB
REF. 1014655E
STM915-16
2/7
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